High Power Stepped Attenuators

Features

  • State of the Art PIN Diode Architecture
  • Fast Switching Speeds
  • Low Loss
  • Accurate
  • Small Size & Weight

 

Descriptions

The ENON High Power Stepped Attenuators are robust PIN diode attenuators with proven field reliability. Proprietary PIN diode architecture minimizes junction temperatures to assure long life under high power conditions. Typical applications include air traffic control systems, and signal processing. The specifications below are typical for this type of product. Please contact DAGE Corporation for a complete specification or your custom requirements. 203-461-9000 ext. 308  Visit us at www.dage.com

Product Number Freq. Band GHz Peak/

Average

Power, Watts

 RF Pulse Width, uSec. Insertion Loss, dB (max Attenuation Steps above I.L., dB Atten. Accurracy, dB VSWR Switch

Speed (uSec)
EA0150 1.02 - 1.04 2500/50.8 0.80, 1, 2, 10 +/-0.21.4:1 2
EA0151 1.02 - 1.042500/5 0.80.8 0, 3, 6, 12 +/-0.21.4:1 2